2D Heterostructure Synthesis

MKS Instruments, DTRA

2D Heterostructure Synthesis


To develop 2-D to 2-D tunneling structures to enable for smaller, faster, more capable microelectronic devices applied to a broad range of applications such as energy, RF, and sensing.

Issues Involved or Addressed

GT has a unique opportunity to apply significant experience and capability in Molecular Beam Epitaxy within GTRI (Wagner) to the synthesis of novel 2-D materials being studied within the Vogel group. This vertically integrated project (VIP) will synthesize large area 2-D materials (e.g., MoS2 and WS2) and device structures using thin film deposition and microfabrication techniques. The impact of synthesis conditions (e.g., plasma assist, source materials, and temperatures) on crystal structure will be studied using techniques such as SEM, XRD, XPS, and Raman.  These materials structures will then be fabricated into 2D-to-2D tunnel junctions and TFETs using microfabrication processes (e.g. photolithography, interlayer dielectrics, metallization, etc.).  Once fabricated, detailed electrical characterization of these devices will be carried out, utilizing conventional (current-voltage, capacitance voltage, etc.) and specialized (e.g. inelastic tunneling spectroscopy) techniques.

Methods and Technologies

  • Molecular Beam Epitaxy
  • Chemical Vapor Deposition
  • Cleanroom Microfabrication
  • Nanomaterial Synthesis
  • Electron Microscopy
  • Raman/Optical Spectroscopy
  • Electrical Characterization
  • Electrical Design

Academic Majors of Interest

  • Materials Science and Engineering
  • Electrical Engineering
  • Mechanical Engineering
  • Computer Engineering

Preferred Interests and Preparation

Meeting Schedule & Location






Baker 323

Team Advisors


MKS Instruments, DTRA